Copper interconnect structure and its formation

ABSTRACT

A structure with improved electromigration resistance and methods for making the same. A structure having improved electromigration resistance includes a bulk interconnect having a dual layer cap and a dielectric capping layer. The dual layer cap includes a bottom metallic portion and a top metal oxide portion. Preferably the metal oxide portion is MnO or MnSiO and the metallic portion is Mn or CuMn. The structure is created by doping the interconnect with an impurity (Mn in the preferred embodiment), and then creating lattice defects at a top portion of the interconnect. The defects drive increased impurity migration to the top surface of the interconnect. When the dielectric capping layer is formed, a portion reacts with the segregated impurities, thus forming the dual layer cap on the interconnect. Lattice defects at the Cu surface can be created by plasma treatment, ion implantation, a compressive film, or other means.

FIELD OF THE INVENTION

The present invention generally relates to interconnect structures ofmicroelectronic devices. In particular, the invention relates to methodsand structures for improving electromigration resistance by creatingdefects in interconnects to enhance impurity segregation.

BACKGROUND AND RELATED ART

Electromigration is the migration of metal atoms in a conductor due toan electrical current. The migration of the metal atoms means metalatoms move from a first area to a second area. As a result, themigrating metal atoms leave voids in the first area. Over time, thevoids can grow in size which increases the resistance of theinterconnect; or the voids can form opens in the interconnects. Eitherway, the interconnect fails. The time it takes to form voids which causefailure in the interconnect is called the electromigration lifetime. Incopper interconnects used in microelectronics, the electromigrationlifetime is determined by mass transport at the interface between thecopper and a dielectric capping layer. Accordingly, many schemes toimprove electromigration resistance aim to improve the adhesion betweenthe dielectric cap and the copper.

One scheme uses a self-aligned CuSiN cap on the top surface of theinterconnect; another uses a self-aligned metal cap of CoWP, and othersuse an alloy seed layer. In the alloy scheme, a dopant (impurity) isintroduced in a copper (Cu) seed layer. During subsequent processing theimpurity segregates to the dielectric cap/Cu interface to form animpurity-oxide layer. The greater the amount of impurity, the greaterthe electromigration resistance (i.e. longer electromigration lifetime).However, the impurities increase the resistance of the interconnects.Furthermore, the segregation of impurity to the interface is believed tobe limited by the impurity oxide formation. Thus, once all theimpurity-oxide is formed, there is no more driving force for impuritysegregation and the impurity remains in the bulk copper therebyincreasing the interconnect resistance. In addition, as interconnectline widths shrink, a greater amount of impurity is required to increaseelectromigration lifetime, thus, further exacerbating the resistanceincrease problem.

Thus, a method and structure for improved electromigration resistance isneeded which improves electromigration lifetime without overlyincreasing the resistance of the copper interconnect. In addition, themethod and structure should be scalable to accommodate decreasinginterconnect line widths.

SUMMARY

The general principal of the present invention is a method of improvingelectromigration lifetime, without unduly increasing interconnectresistance, by intentionally creating lattice defects at the surface ofcopper interconnects. The defects drive impurity (dopant) segregation tothat region. Thus, a higher atomic percentage of impurity can be usedwithout increasing the resistance of the interconnect.

In one embodiment an interconnect structure includes a metal oxideportion, a metallic portion, and a bulk conductor portion having a topregion. The metallic portion is located at the top region of the bulkconductor and the metal oxide portion is above the metallic portion.

Another embodiment an interconnect structure includes a manganese oxideportion, a metallic manganese portion, and a copper portion having a topregion. The metallic manganese portion is located at the top region ofthe copper, and the manganese oxide portion is above the metallicmanganese portion.

An embodiment of a method of forming an interconnect structure withimproved electromigration resistance includes forming an opening in adielectric region on a substrate, forming an impurity containing layer,substantially filling the opening with a bulk conductor, stressing a topregion of the bulk conductor or creating defects at a top region of thebulk conductor, and thermally treating the substrate thereby forming animpurity containing oxide layer and a metallic impurity layer at the topregion of the bulk conductor.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is cross-section view of an interconnect structure according toan embodiment of the present invention;

FIG. 1B is cross-section view of another interconnect structureaccording to an embodiment of the present invention;

FIG. 2 is a flow chart illustrating an embodiment of a method ofcreating the dual layer interconnect structure of FIG. 1A;

FIG. 3A illustrates a liner formed in an opening in a dielectricaccording to an embodiment of a method step of the present invention;

FIG. 3B illustrates a bulk conductor in an opening in a dielectricaccording to an embodiment of a method step of the present invention;

FIG. 3C illustrates creating lattice damage in a top portion of a bulkconductor according to an embodiment of a method step of the presentinvention;

FIG. 3D illustrates creating lattice damage in a top portion of a bulkconductor according to another embodiment of a method step of thepresent invention; and

FIG. 3E illustrates forming a capping layer according to an embodimentof a method step of the present invention.

Other objects, aspects and advantages of the invention will becomeobvious in combination with the description of accompanying drawings,wherein the same number represents the same or similar parts in allfigures.

DETAILED DESCRIPTION

Embodiments of an interconnect structure of the present invention aredescribed in conjunction with FIGS. 1A-B. Embodiments of methods to formthe interconnect structure of the present invention are described inconjunction with FIGS. 2-3E.

Referring to FIG. 1A, an embodiment of an interconnect structure 100 ofthe present invention is illustrated. The interconnect structure 100includes a bulk conductor 130 having top 132 and bottom 134 regions. Theinterconnect structure 100 is substantially embedded in a dielectric110. In the embodiment in FIG. 1A, the bulk conductor is surrounded onthree sides by a liner 120. In other embodiments, there may be no liner120, a liner 120 only on the sidewalls, or only a portion of the liner120 on the bottom region 134 of the bulk conductor 130. At the topregion 132 of the bulk conductor 130 is a metallic portion 140. Abovethe metallic portion 140 is a metal oxide portion 150. In the preferredembodiment of FIG. 1A, both the metallic portion 140 and metal oxideportion 150 have liner 120 on two sides. Thus, in the preferredembodiment the interconnect comprises a bulk conductor 130, having adual layer (metallic portion 140, and metal oxide portion 150) at a topregion 132, all surrounded by liner 120 in a dielectric 110 opening suchthat the liner 120, metal oxide portion 150 and dielectric 110 aresubstantially co-planar. FIG. 1A also illustrates a capping layer 160above the dielectric 110, liner 120 and metal oxide portion 150. In afurther embodiment shown in FIG. 1B, the dielectric 110, liner 120, andmetallic portion 140 are substantially co-planar. Here, the metal oxideportion 150 is above the metallic portion 140, but is not bordered byliner 120. The interconnect structures have an interconnect line width170.

In a preferred embodiment, the bulk conductor 130 is substantiallycopper, meaning there can and likely will be impurities in the bulkconductor, but the conductor is mostly copper. The liner 120 can includeone or more layers of material. The liner 120 functions to promoteadhesion of the bulk conductor 130 and dielectric 110, and/or to preventcopper diffusion from the bulk conductor 130 to the dielectric 110.Liner material can include elements of Groups IVB through VIB of theperiodic table of the elements, elements of Group VIIIB, alloys of thebulk conductor, metal oxides and metal nitrides. In a preferredembodiment, the liner 120 includes a tantalum (Ta) layer and a tantalumnitride (TaN) layer. In another preferred embodiment, the liner 120includes a Ta layer, a TaN layer and a manganese (Mn) containing alloyportion.

In a preferred embodiment the metallic portion 140 is a region thatcontains a metal impurity (dopant) in a metallic bonding state, asopposed to an oxidized bonding state. Metallic bonding states exist inpure metals, a metal alloy (i.e. a solid solution or mixture of two ormore metals), or an intermetallic compound (i.e. there is a fixedstoichiometry). In a preferred embodiment, the metal impurity (dopant)is Mn. In a preferred embodiment, the Mn is in a metallic bonding statebecause it is alloyed to the bulk conductor 130, preferably, copper.Thus, in the preferred embodiment, the metallic portion 140 is CuMn.Note, that in an earlier description of the bulk conductor 130, it wassaid that the bulk conductor can have impurities. Mn can be an impurityin the bulk conductor, 130. Thus, in the preferred embodiment, adifference between bulk conductor 130 having a Mn impurity and themetallic portion 140, is that the amount of Mn in the metallic portion140 is greater than the amount of Mn in the bulk conductor 130. Thus,metallic portion 140 is a portion of the interconnect structure to whichthe metal impurity (dopant) has preferentially segregated. While thepreferred embodiment described one impurity (dopant) in the metallicportion 140, there can be more than one impurity (dopant) in themetallic portion 140. By way of example and not limitation, impurity(dopant) of the metallic portion 140 can include one or more of thefollowing transition or other metal elements: Mn, Al, Ti, Zn, Sn, andIn.

The metal oxide portion 150 is a layer including a metal and oxygen. Ina preferred embodiment the metal is Mn so the metal oxide portion isMnO. The metal oxide portion 150 can also include elements other thanmetals and oxygen, for example Si. Thus, another embodiment could beMnSiO.

As shown in FIG. 1A, the metallic portion 140 and metal oxide 150 form adual layer at the top of the bulk conductor. In a preferred embodiment,the metal of the metal oxide portion 150, and the metal of the metallicportion 140 are the same type of metal, Mn. In a preferred embodiment,the bulk conductor 130 is copper with Mn impurities. In the preferredembodiment, the amount of Mn found in the dual layer is greater than orequal to 60% of the Mn found in the total interconnect structure andranges there between.

The dielectric 110 can include one or more layers of insulatingmaterial. Insulating materials typically include pure or doped silicateglasses; in a preferred embodiment, the doping being fluorine or carbon.The insulating materials can be porous. Preferably, the dielectric 110has a dielectric constant less than 4.

The capping layer 160 is an insulating material containing nitrogen. Ina preferred embodiment the capping layer 160 is SiCN. In anotherpreferred embodiment, the capping layer 160 has a coefficient of thermalexpansion which is greater than that of the bulk conductor 130.

An advantage of the dual layer structure described above is that moremetal dopant (preferably Mn) can segregate to the top surface of thebulk conductor (preferably copper). The dual layer of the top surfaceprovides a stronger capping layer-to-bulk conductor coupling whichblocks copper migration and thus lengthens the electromigrationlifetime. The dual layer structure of the metal oxide (MnO or MnSiO,preferably) and metallic portions provides for more incorporation ofmetal dopant (i.e. impurity) without unduly increasing the resistance ofthe bulk conductor.

Referring to FIG. 2, a flow chart of an embodiment of a method ofcreating the dual layer structure of FIG. 1A is presented. The methodincludes the following steps: step providing a dielectric having anopening; forming a liner; forming a bulk conductor; polishing theconductor; creating lattice damage in the bulk conductor; and forming acapping layer.

Referring to FIG. 3A, a dielectric 110 having an opening 115 is shown.The opening 115 of the dielectric 110 has a liner 120 formed in it. Theliner 120, in this embodiment, includes an alloy containing an impurity(dopant). Other layers, in addition to the alloy containing the impurity(dopant), can also be included in the liner 120 as described earlier inconjunction with FIGS. 1A and 1B. The impurity (dopant) of the alloy caninclude one or more of the following transition or other metal elements:Mn, Al, Ti, Zn, Sn, and In. In a preferred embodiment the impurity is Mnsuch that the alloy is CuMn. As deposited, the percentage of impurity inthe alloy is from about 0.25 atomic percent to about 2.0 atomic percentand ranges there between. Liner 120 layer(s) can be formed by one ormore of the following methods: chemical vapor deposition (CVD), atomiclayer deposition (ALD), and physical vapor deposition (PVD).

Referring to FIG. 3B the bulk conductor 130 is formed to fill andoverflow the opening 115. Referring to FIGS. 3C and 3D, the bulkconductor 130 is polished to either (1) being coplanar with the liner asin FIG. 3C, or (2) being coplanar with the dielectric 110 as in FIG. 3D.At either point (after bulk conductor polish in FIG. 3C or after linerpolish in FIG. 3D), one of the lattice damaging techniques 260,represented by arrows, can be applied.

Lattice damaging techniques 260 include stressing the top region of thebulk conductor and creating defects in the top region of the bulkconductor. Stressing the top of the conductor can be accomplished byforming a capping layer over the bulk conductor which has a lowercoefficient of thermal expansion than the bulk conductor. In such a casean excessive compressive stress is formed. Stressing can also beaccomplished by forming a dielectric layer and UV curing to cause acompressive stress in the top region of the bulk conductor. Defects canbe created by plasma bombardment of the bulk conductor 130 to embedatoms (preferably neutral atoms, for example argon), ion implantation ofthe bulk conductor 130, deposition of a capping layer with a highinitial bias to create damage, and oxidation followed by reduction ofthe bulk conductor 130. Oxidation can be done by exposing the top regionof the bulk conductor to an oxygen containing atmosphere. Reduction canbe done by exposing the top region of the bulk conductor to a nitrogenor hydrogen containing environment. One or more of the lattice damagingtechniques 260 can be applied to the same structure. The latticedamaging techniques can be preformed in-situ with capping layer 160formation or can be preformed ex-situ prior to the capping layer 160formation. The purpose of applying a lattice damaging technique 260 tothe bulk conductor 130 is to create lattice defects in the top region ofthe conductor. The lattice defects will act as impurity (dopant) sinks.

Referring to FIG. 3E, the capping layer 160 is formed. The capping layeris formed by plasma enhanced chemical vapor deposition (PECVD) at atemperature from about 300 C to about 400 C and ranges there-between.The elevated temperature drives impurities from the impurity-containingalloy layer of the liner 120 and/or bulk conductor 130 to the cappinglayer-bulk conductor interface. At the capping layer-bulk conductorinterface, the impurities react with the capping layer to form the metaloxide film 160. Even if the capping layer is SiCN, a metal oxide film160 will still form because adventitious oxygen from residual partialpressure of H₂O in the capping tool vacuum system is typicallyincorporated at the Cu/cap interface during seasoning and pre-cleaningsteps of cap deposition processing. Normally, the driving force formigration of impurities to the capping layer-bulk conductor interface islargely satisfied once the metal oxide 160 is formed. However, thepresence of lattice defects at the top of the bulk conductor furtherdrives the migration of impurities to the interface. Thus, theimpurities continue to segregate to the top surface 132 of the bulkconductor and a metallic portion 140 is formed. As a result, a reducedamount or no impurities will be found at the liner layer 120.

The additional segregation driving force of lattice defects means thatthe impurity (dopant) is largely found in the dual layer rather than thebulk conductor 130. As a result, a higher percentage of dopant can beused in the alloy seed layer of liner 120. The higher percentagemigrates to the dual layer rather than increasing the resistance of thebulk conductor. Thus, by using these lattice damaging methods to createa dual layer, the electromigration resistance of smaller line widths canbe achieved. Here, smaller line widths includes line widths less thanabout 100 nm to about 30 nm and lower.

While the present invention has been described with reference to whatare presently considered to be the preferred embodiments, it is to beunderstood that the invention is not limited to the disclosedembodiments. On the contrary, the invention is intended to cover variousmodifications and equivalent arrangements included within the spirit andscope of the appended claims. The scope of the following claims is to beaccorded the broadest interpretation so as to encompass all suchmodifications and equivalent structures and functions.

What is claimed is:
 1. An interconnect structure comprising; a metaloxide portion; a metallic portion; and a bulk conductor portion having atop region; wherein the metallic portion is at the top region and themetal oxide portion is above the metallic portion.
 2. The structure ofclaim 1 further comprising: a capping layer which has a thermalcoefficient of expansion which is less than a thermal coefficient ofexpansion of the bulk conductor.
 3. The structure of claim 2 wherein thecapping layer is a nitrogen containing insulator layer or a film stackcomprising a nitrogen containing insulator layer.
 4. The structure ofclaim 1 wherein the metallic portion comprises at least one of elementsselected from the group consisting of Mn, Al, Ti, Zn, Sn and In.
 5. Thestructure of claim 1 wherein a metal of the metal oxide portion and ametal of the metallic portion are the same metal element.
 6. Thestructure of claim 5 wherein the wherein a sum of a percentage of thesame metal element in the metal oxide portion and a percentage of thesame metal element in the metallic manganese portion is 1.5 timesgreater than a percentage of the same metal element in the bulkconductor.
 7. The structure of claim 5 wherein the same metal element isMn.
 8. The structure of claim 1 wherein the interconnect structure has aline width, wherein the line width is less than or equal to 30nanometers.
 9. An interconnect structure comprising: a manganese oxideportion; a metallic manganese portion; and a copper portion having a topregion; wherein the metallic manganese portion is at the top region andthe manganese oxide portion is above the metallic manganese portion. 10.The structure of claim 9 further comprising: a capping layer above themanganese oxide portion wherein the capping layer comprises anitrogen-containing insulator layer.
 11. The structure of claim 9wherein a sum of a percentage of Mn in the manganese oxide portion and apercentage of Mn in the metallic manganese portion is 1.5 times greaterthan a percentage of the Mn in the bulk conductor.
 12. The structure ofclaim 9 wherein the interconnect has a line width, wherein the linewidth is less than or equal to 100 nanometers.
 13. The method of formingan interconnect structure with improved electromigration resistance, themethod comprising: forming an opening in a dielectric region on asubstrate; forming an impurity containing layer; substantially fillingthe opening with a bulk conductor; stressing a top region of the bulkconductor or creating defects at a top region of the bulk conductor; andthermally treating the substrate thereby forming an impurity containingoxide layer and a metallic impurity layer at the top region of the bulkconductor.
 14. The method of claim 13 wherein stressing the top regionof the bulk conductor is by forming a capping layer over the bulkconductor wherein the capping layer has a lower coefficient of thermalexpansion than the bulk conductor.
 15. The method of claim 13 whereinstressing comprises a forming a dielectric layer and UV curing to causea compressive stress in the top region of the bulk conductor.
 16. Themethod of claim 13 wherein the top region of the bulk conductor iscompressed.
 17. The method of claim 13 wherein creating defectscomprises ion implanting the top region of the bulk conductor with anoble gas.
 18. The method of claim 13 wherein creating defects comprisesplasma treating the top region of the bulk conductor.
 19. The method ofclaim 13 wherein creating defects comprises oxidation of the top regionof the bulk conductor followed by reduction of the top region.